Sic Application Market Take Off The Active Layout Of Infineon

Because of the characteristics of high switching speed and lower switching loss, SiC can achieve small volume and high power target because of its high switching speed and lower switching loss. Therefore, it leaps into the new power design star. Its application market is also accelerated and will expand into more applications in the next few years, and the power chip merchants also accelerate the layout. Footsteps, like Infineon, continue to amplify the CoolSiC MOSFET product line, aiming at three major areas of solar power, electric vehicle charging and power supply.

Ma Guowei, an application and system director of the Great China area of Infineon industrial power control, points out that the SiC device is more energy-efficient than Si power semiconductor, and provides higher system density because of the reduction in the volume of the passive components. In addition to electric cars, SiC will be more popular in a wide range of applications in the coming years, such as optoelectronics, robots, industrial power supply, traction equipment, and variable speed motors. Infineon will continue to launch the CoolSiC MOSFET series with SiC trench (Trench) technology to provide high performance, high reliability, and high power density and cost-effective solutions.

Ma Guowei further explained that the previous design of MOSFET is mostly planar, which needs to be taken between the performance and the reliability of the gate oxide layer under the conduction state, but with the trench technology, it is easier to meet the requirements of high performance without violating the reliability of the gate oxide layer. In other words, the use of groove technology can achieve better reliability of the gate oxide layer, and achieve the switching efficiency that the silicon (Si) material can not reach, and then reduce the volume of the whole system and increase the power density.

It is reported that in order to lay out the SiC application market, Infineon launched the CoolSiC module "EASY 1B" in 2017, and also launched a series of CoolSiC products in 2018 Germany Nuremberg power electronic system and component exhibition (PCIM Europe), including the semi bridge topology CoolSiC module "EASY 2B", and CoolSiC module using 62mm half bridge technology. .

The EASY 1B conduction resistance, published in 2017, is only 45m Omega, suitable for motor drive, solar or welding technology, and the newly introduced EASY 2B module is 8m Omega for each switch, which is suitable for applications above 50kW and fast switching operations, including solar inverter, fast charging system or continuous electric system solution. . As for the 62mm half bridge technology module, it has higher power, and the conduction resistance of each switch is only 6m Omega, which helps to realize the low inductance connection of the middle power grade system. It can play a role in various application fields, including medical technology or the auxiliary power supply for railway.

Ma Guowei revealed that the company's CoolSiC MOSFET will be based on 1200V first, because in the industrial application market, 1200V is the most common voltage; of course, the company will also continue to launch related solutions to develop products above / below 1200V, smaller, and lower resistance in accordance with different application requirements.